C8051F50x-F51x
Table 5.6. Internal High-Frequency Oscillator Electrical Characteristics
VDD = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Oscillator Frequency
Oscillator Supply Current
Conditions
IFCN = 111b;
Min
24 – 0.5%
—
Typ
Max
24 + 0.5%
1300
Units
MHz
µA
1
24
Internal Oscillator On
OSCICN[7:6] = 11b
830
(from V
)
DD
Internal Oscillator Suspend
OSCICN[7:6] = 00b
ZTCEN = 1
Temp = 25 °C
Temp = 85 °C
Temp = 125 °C
—
—
—
66
110
190
—
—
—
µA
Wake-up Time From Suspend OSCICN[7:6] = 00b
—
—
1
—
—
µs
Power Supply Sensitivity
Constant Temperature
Constant Supply
0.10
%/V
2
Temperature Sensitivity
TC
TC
—
—
5.0
–0.65
—
—
ppm/°C
ppm/°C
1
2
2
1. This is the average frequency across the operating temperature range
2. Use temperature coefficients TC and TC to calculate the new internal oscillator frequency using the
1
2
following equation:
2
f(T) = f0 * (1 + TC *(T - T0) + TC *(T - T0) )
1
2
where f0 is the internal oscillator frequency at 25 °C and T0 is 25 °C.
Figure 5.2. Typical Internal High-Frequency Oscillator Over Temperature
Rev. 1.1
47
SILICON [ SILICON ]
