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LH28F800SUT-70 参数 Datasheet PDF下载

LH28F800SUT-70图片预览
型号: LH28F800SUT-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ( 512K × 16 , 1M × 8 )快闪记忆体 [8M (512K 】 16, 1M 】 8) Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 327 K
品牌: SHARP [ SHARP ELECTRIONIC COMPONENTS ]
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8M (512K × 16, 1M × 8) Flash Memory  
LH28F800SU  
BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS  
Bus Operations for Word-Wide Mode (BYT» E» = V )  
IH  
MODE  
RP»  
VIH  
VIH  
CE»1  
VIL  
CE»0  
VIL  
OE»  
VIL  
VIH  
WE  
VIH  
VIH  
A1  
X
DQ0 - DQ15  
DOUT  
RY/» BY»  
NOTE  
Read  
X
X
1, 2, 7  
1, 6, 7  
Output Disable  
VIL  
VIL  
X
High-Z  
VIL  
VIH  
VIH  
VIH  
VIL  
VIH  
Standby  
VIH  
X
X
X
High-Z  
X
1, 6, 7  
Deep Power-Down  
Manufacturer ID  
Device ID  
VIL  
VIH  
VIH  
VIH  
X
X
X
X
X
VIL  
VIH  
X
High-Z  
00B0H  
66A8H  
DIN  
VOH  
VOH  
VOH  
X
1, 3  
VIL  
VIL  
VIL  
VIL  
VIL  
VIL  
VIL  
VIL  
VIH  
VIH  
VIH  
VIL  
4
4
Write  
1, 5, 6  
Bus Operations For Byte-Wide Mode (BYT» E» = V )  
IL  
MODE  
RP»  
VIH  
VIH  
CE»1  
VIL  
CE»0  
VIL  
OE»  
VIL  
VIH  
WE  
VIH  
VIH  
A0  
DQ0 - DQ7  
DOUT  
RY/» BY»  
NOTE  
Read  
X
X
X
X
1, 2, 7  
1, 6, 7  
Output Disable  
VIL  
VIL  
High-Z  
VIL  
VIH  
VIH  
VIH  
VIL  
VIH  
Standby  
VIH  
X
X
X
High-Z  
X
1, 6, 7  
Deep Power-Down  
Manufacturer ID  
Device ID  
VIL  
VIH  
VIH  
VIH  
X
X
X
X
X
VIL  
VIH  
X
High-Z  
B0H  
A8H  
DIN  
VOH  
VOH  
VOH  
X
1, 3  
VIL  
VIL  
VIL  
VIL  
VIL  
VIL  
VIL  
VIL  
VIH  
VIH  
VIH  
VIL  
4
4
Write  
1, 5, 6  
NOTES:  
1. X can be V or V for address or control pins except for RY»/BY», which is either V or V .  
IH  
IL  
OL  
OH  
2. RY»/BY» output is open drain. When the WSM is ready, Erase is suspended or the device is in deep power-down mode,  
RY »/BY» will be at V if it is tied to V through a resistor. When the RY»/BY» at V is independent of OE while a WSM  
»
OH  
CC  
OH  
operation is in progress.  
3. RP» at GND ± 0.2 V ensures the lowest deep power-down current.  
4. A and A at V provide manufacturer ID codes in x8 and x16 modes respectively. A and A , at V provide device ID  
0
1
IL  
0
1
IH  
codes in x8 and x16 modes respectively. All other addresses are set to zero.  
5. Commands for different Erase operations, Data Write operations of Lock-Block operations can only be successfully  
completed when V = V  
.
PPH  
PP  
6. While the WSM is running, RY»/BY» in Level-Mode (default) stays at V until all operations are complete. RY»/BY» goes to  
OL  
V
when the WSM is not busy or in erase suspend mode.  
OH  
7. RY»/BY» may be at V while the WSM is busy performing various operations. For example, a status register read during a  
OL  
write operations.  
9