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LH28F800SUT-70 参数 Datasheet PDF下载

LH28F800SUT-70图片预览
型号: LH28F800SUT-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ( 512K × 16 , 1M × 8 )快闪记忆体 [8M (512K 】 16, 1M 】 8) Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 327 K
品牌: SHARP [ SHARP ELECTRIONIC COMPONENTS ]
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8M (512K × 16, 1M × 8) Flash Memory  
LH28F800SU  
PIN DESCRIPTION (Continued)  
SYMBOL  
TYPE  
NAME AND FUNCTION  
WRITE PROTECT: Erase blocks can be locked by writing a non-volatile lock-bit for  
each block. When WP is low, those locked blocks as reflected by the Block-Lock Status  
bits (BSR.6), are protected from inadvertent Data Writes or Erases. When WP is high,  
all blocks can be Written or Erased regardless of the state of the lock-bits. The WP  
input buffer is disabled when RP» transitions low (deep power-down mode).  
WP  
INPUT  
BYTE ENABLE: BYTE low places device x8 mode. All data is then input or output  
on DQ0 - DQ7, and DQ8 - DQ15 float. Address A0 selects between the high and low  
BYTE  
INPUT  
byte. BYTE high places the device in x16 mode, and turns off the A input buffer.  
0
Address A1, then becomes the lowest order address.  
3.3/5.0 VOLT SELECT: 3/5» high configures internal circuits for 3.3 V operation.  
3/5» low configures internal circuits for 5.0 V operation.  
NOTES: Reading the array with 3/5» high in a 5.0 V system could damage the  
device. There is a significant delay from 3/5» switching to valid data.  
3/5»  
INPUT  
ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V): For erasing memory array blocks or  
writing words/bytes/pages into the flash array.  
VPP  
VCC  
SUPPLY  
DEVICE POWER SUPPLY (3.3 V ±0.3 V, 5.0 V ±0.5 V) (2.7 ~ 3.6 at Read Operation):  
Do not leave any power pins floating.  
SUPPLY  
SUPPLY  
GND  
NC  
GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating.  
NO CONNECT: No internal connection to die, lead may be driven or left floating.  
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