LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
1
AC Characteristics - Read Only Operations (Continued)
T = 0°C to +70°C
A
VCC = 5.0 V ± 0.25V VCC = 5.0 V ± 0.5V
SYMBOL
PARAMETER
UNITS
NOTE
MIN.
70
10
0
MAX.
MIN.
80
10
0
MAX.
tAVAV
tAVEL
tAVGL
tAVQV
tELQV
tPHQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
Read Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup to CE» Going Low
Address Setup to OE» Going Low
Address to Output Delay
CE» to Output Delay
3, 4
3, 4
70
70
80
80
2
400
30
480
35
RP» High to Output Delay
OE» to Output Delay
2
3
3
3
3
0
0
CE» to Output in Low Z
CE» to Output in High Z
OE» to Output in Low Z
OE» to Output in High Z
0
0
25
25
30
30
Output Hold from Address, CE» or
OE» change, whichever occurs first
0
tOH
0
ns
3
tFLQV
tFHQV
70
25
5
80
30
5
BYTE to Output Delay
ns
ns
ns
3
3
3
tFLQZ
BYTE Low to Output in High Z
CE» Low to BYTE High or Low
tELFL
tELFH
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE may be delayed up to t - t after the falling edge of CE» without impact on t
3. Sampled, not 100% tested.
»
.
ELQV
ELQV
GLQV
4. This timing parameter is used to latch the correct BSR data onto the outputs.
24
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
