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LC72722 参数 Datasheet PDF下载

LC72722图片预览
型号: LC72722
PDF下载: 下载PDF文件 查看货源
内容描述: 单芯片的RDS信号与处理系统LSI [Single-Chip RDS Signal-Processing System LSI]
分类和应用:
文件页数/大小: 15 页 / 115 K
品牌: SANYO [ SANYO SEMICON DEVICE ]
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LC72722, 72722M, 72722PM  
Specifications  
Absolute Maximum Ratings at Ta = 25°C, Vssd = Vssa = 0 V  
Parameter  
Maximum supply voltage  
Symbol  
DD max  
Conditions  
Ratings  
–0.3 to +7.0  
–0.3 to +7.0  
–0.3 to Vddd +0.3  
–0.3 to Vdda +0.3  
–0.3 to +7.0  
–0.3 to Vddd +0.3  
–0.3 to Vdda +0.3  
6.0  
Unit  
V
V
Vddd, Vdda: Vdda Vddd +0.3 V  
V
V
V
IN1 max CL, DI, CE, SYR, T1, T2, T3, T4, T5, T6, T7, SYNC  
IN2 max XIN  
V
Maximum input voltage  
Maximum output voltage  
Maximum output current  
Allowable power dissipation  
V
IN3 max MPXIN, CIN  
V
VO1 max  
VO2 max  
VO3 max  
IO1 max  
IO2 max  
IO3 max  
DO, SYNC, RDS-ID, T3, T4, T5, T6, T7  
XOUT  
V
V
FLOUT  
V
DO, T3, T4, T5, T6, T7  
XOUT, FLOUT  
mA  
mA  
mA  
mW  
mW  
mW  
°C  
°C  
3.0  
SYNC, RDS-ID  
20.0  
LC72722:DIP24S:  
350  
Pd max  
Ta 85°C  
LC72722M:MFP24S:  
LC72722PM:MFP24:  
150  
175  
Operating temperature  
Storage temperature  
Topr  
Tstg  
–40 to +85  
–55 to +125  
Allowable Operating Ranges at Ta = –40 to +85°C, Vssd = Vssa = 0 V  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
4.5  
typ  
5.0  
max  
5.5  
V
DD1  
Vddd, Vdda: Vddd = Vdda  
Vddd: Serial data hold voltage  
CL, DI, CE, SYR, T1, T2  
CL, DI, CE, SYR, T1, T2  
V
V
Supply voltage  
VDD2  
2.0  
Input high-level voltage  
Input low-level voltage  
Output voltage  
VIH  
VIL  
VO  
0.7 Vddd  
0
6.5  
0.3 Vddd  
6.5  
V
V
DO, SYNC, RDS-ID, T3, T4, T5, T6, T7  
V
V
IN1  
MPXIN : f = 57 ±2 kHz  
50  
mVrms  
mVrms  
mVrms  
MHz  
MHz  
ppm  
µs  
Input amplitude  
VIN2  
MPXIN : 100% modulation composite  
100  
400  
VXIN  
XIN  
1500  
±100  
XIN, XOUT : CI 120 (XS = 0)  
4.332  
8.664  
Guaranteed crystal oscillator frequencies  
Xtal  
XIN, XOUT : CI 70 (XS = 1)  
Crystal oscillator frequency deviation  
Data setup time  
TXtal  
tSU  
tHD  
tCL  
XIN, XOUT : fO = 4.322 MHz, 8.664 MHz  
DI, CL  
DI, CL  
CL  
0.75  
0.75  
0.75  
0.75  
0.75  
0.75  
0.75  
Data hold time  
µs  
Clock low-level time  
Clock high-level time  
CE wait time  
µs  
tCH  
tEL  
CL  
µs  
CE, CL  
CE, CL  
CE, CL  
CE  
µs  
CE setup time  
tES  
µs  
CE hold time  
tEH  
tCE  
tLC  
µs  
CE high-level time  
Data latch change time  
20  
ms  
1.15  
µs  
DO, CL: Differs depending on the value of the  
pull-up resistor used.  
tDC  
tDH  
0.46  
0.46  
µs  
µs  
Data output time  
DO, CE: Differs depending on the value of the  
Electrical Characteristics at Ta = –40 to +85°C, Vssd = Vssa = 0 V  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Rmpxin MPXIN–Vssa : f = 57 kHz  
43  
kΩ  
kΩ  
Input resistance  
Rcin  
Rf  
CIN–Vssa : f = 57 kHz  
100  
1.0  
Internal feedback resistance  
Center frequency  
–3 dB bandwidth  
Gain  
XIN  
MΩ  
kHz  
kHz  
dB  
fc  
FLOUT  
56.5  
2.5  
28  
57.0  
3.0  
57.5  
3.5  
34  
BW – 3 dB FLOUT  
Gain MPXIN–FLOOUT : f = 57 kHz  
31  
Continued on next page.  
No. 5602-4/15  
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