LC7218, 7218M, 7218JM
Electrical Characteristics for the Allowable Operating Ranges
Parameter
Internal feedback resistance
Hysteresis
Symbol
Rf (1)
Rf (2)
Rf (3)
Rf (4)
Rf (5)
Conditions
min
typ
1.0
max
Unit
MΩ
kΩ
kΩ
kΩ
kΩ
V
XIN
FMIN
AMIN
HCTR
LCTR
LCTR
500
500
500
500
V
H
0.1 V
0.6 V
DD
DD
I
I
I
I
I
(1)
(2)
(3)
(4)
(5)
(1)
(2)
(3)
(4)
(5)
CE, CL, DI: V = 6.5 V
I
5.0
5.0
20
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
IH
IH
IH
IH
IH
IN0, IN1: V = V
I
DD
Input high level current
XIN: V = V
I DD
FMIN, AMIN: V = V
40
I
DD
HCTR, LCTR: V = V
I
40
DD
I
CE, CL, DI: V = V
5.0
5.0
20
IL
IL
IL
IL
IL
I
SS
I
IN0, IN1: V = V
I
SS
Input low level current
I
I
I
XIN: V = V
I
SS
FMIN, AMIN: V = V
40
I
SS
HCTR, LCTR: V = V
40
I
SS
V
V
(1)
(2)
(1)
(2)
(3)
(4)
(5)
(6)
(1)
(2)
(3)
OUT1, OUT2: I = –1 mA
O
V
V
– 1.0
– 1.0
OH
OH
DD
DD
Output high level voltage
PD1, PD2: I = –0.5 mA
O
V
V
V
V
V
V
V
OUT1, OUT2: I = 1 mA
O
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
V
OL
OL
OL
OL
OL
OL
PD1, PD2: I = 0.5 mA
O
V
OUT3 to OUT6: I = 5 mA
O
V
Output low level voltage
Output off leakage current
OUT0: I = 1 mA
O
V
DO: I = 5 mA
O
V
SYC: I = 0.5 mA (V
= 3.5 to 6.5 V)
V
O
DD
I
I
I
OUT3 to OUT6, OUT0: V = 13 V
O
µA
µA
µA
OFF
OFF
OFF
DO: V = 6.5 V
O
SYC: V = 6.5 V (V
O
= 3.5 to 6.5 V)
DD
Three-state high level
off leakage current
I
PD1, PD2: V = V
0.01
10.0
nA
OFFH
O
DD
Three-state low level
off leakage current
I
PD1, PD2: V = V
O
0.01
2
10.0
3
nA
pF
OFFL
SS
Input capacitance
Current drain
C
FMIN, HCTR
1
IN
V
: f (2) = 130 MHz, V (2) = 70 mVrms,
IN
DD IN
I
(1)
(2)
with a 7.2 MHz crystal, other input pins at V
output pins open
,
20
30
mA
mA
DD
SS
V
: PLL block stopped (PLL inhibit state), crystal
DD
I
oscillator operating (SYC, TB), with a 7.2 MHz crystal,
1.0
DD
other input pins at V , output pins open
SS
Note: A capacitor of at least 2000 pF must be inserted between the power supply V
and V potentials.
SS
DD
No. 4758-5/16
SANYO [ SANYO SEMICON DEVICE ]
