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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第4页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第5页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第6页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第7页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第9页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第10页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第11页浏览型号KFG1216U2B-SIB6的Datasheet PDF文件第12页  
OneNAND512Mb(KFG1216U2B-xIB6)  
2.2 Definitions  
FLASH MEMORY  
B (capital letter)  
Byte, 8bits  
Word, 16bits  
Bit  
W (capital letter)  
b (lower-case letter)  
ECC  
Error Correction Code  
Calculated ECC  
Written ECC  
BufferRAM  
ECC that has been calculated during a load or program access  
ECC that has been stored as data in the NAND Flash array or in the BufferRAM  
On-chip internal buffer consisting of BootRAM and DataRAM  
BootRAM  
A 1KB portion of the BufferRAM reserved for Boot Code buffering  
A 4KB portion of the BufferRAM reserved for Data buffering  
DataRAM  
Part of a Page of which 512B is the main data area and 16B is the spare data area.  
It is also the minimum Load/Program/Copy-Back Program unit  
during a 1~4 sector operation is available.  
Sector  
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.  
-
528B of which 512B is in main area and 16B in spare area  
Data unit  
- 1056B of which 1024B is in main area and 32B in spare area  
- 1584B of which 1536B is in main area and 48B in spare area  
- 2112B of which 2048B is in main area and 64B in spare area  
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