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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
1.5 General Overview  
FLASH MEMORY  
OneNAND‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control  
logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB  
for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of  
~76ns.  
The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq. Refer to chapter  
4.2) with minimum 6-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are deter-  
mined by programmable read latency.  
OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter  
register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block OTP(Block 0) that  
can be used to increase system security or to provide identification capabilities.  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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