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K9XXG16UXM-Y 参数 Datasheet PDF下载

K9XXG16UXM-Y图片预览
型号: K9XXG16UXM-Y
PDF下载: 下载PDF文件 查看货源
内容描述: 256M ×8位/ 128M x 16位NAND闪存 [256M x 8 Bit / 128M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 679 K
品牌: SAMSUNG [ SAMSUNG ]
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K9W4G08U1M  
K9K2G08Q0M  
K9K2G08U0M  
K9W4G16U1M  
K9K2G16Q0M  
K9K2G16U0M  
FLASH MEMORY  
Data Protection & Power up sequence  
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector  
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and  
is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10µs is required before internal cir-  
cuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides  
additional software protection.  
Figure 18. AC Waveforms for Power Transition  
1.8V device : ~ 1.5V  
3.3V device : ~ 2.5V  
1.8V device : ~ 1.5V  
3.3V device : ~ 2.5V  
VCC  
High  
WP  
WE  
10µs  
39  
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