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K9K1208D0C 参数 Datasheet PDF下载

K9K1208D0C图片预览
型号: K9K1208D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 955 K
品牌: SAMSUNG [ SAMSUNG ]
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K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
Data Protection & Power up sequence  
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector  
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-  
ware protection and is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 10µs is  
required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for  
program/erase provides additional software protection.  
Figure 18. AC Waveforms for Power Transition  
1.8V device : ~ 1.5V  
2.65V device : ~ 2.0V  
3.3V device : ~ 2.5V  
1.8V device : ~ 1.5V  
2.65V device : ~ 2.0V  
3.3V device : ~ 2.5V  
VCC  
High  
WP  
WE  
10µs  
39  
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