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K9K1208D0C 参数 Datasheet PDF下载

K9K1208D0C图片预览
型号: K9K1208D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 955 K
品牌: SAMSUNG [ SAMSUNG ]
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K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
> In high state of LOCKPRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is  
regarded as NAND Flash without LOCKPRE pin.  
Block Lock Mode  
Block Lock mode is enabled while LOCKPRE pin state is high, which is to offer protection features for NAND Flash data. The Block  
Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data by allowing those blocks to be locked  
or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first allows software control(command input  
method) of block locking that is useful for frequently changed data blocks, while the second requires hardware control(WP low pulse  
input method) before locking can be changed that is useful for protecting infrequently changed code blocks.  
The followings summarized the locking functionality.  
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.  
- The Lock-tight command locks blocks and prevents from being unlocked.  
And Lock-tight state can be returned to lock state only by Hardware control(WP low pulse input).  
1. Block lock operation  
1) Lock  
- Command Sequence: Lock block Command(2Ah)  
- All blocks default to locked by power-up and Hardware control(WP low pulse input)  
- Partial block lock is not available; Lock block operation is based on all block unit  
- Unlocked blocks can be locked by using the Lock block command, and a lock block’s status can be changed to unlock or lock-tight  
using the appropriate commands  
WP  
CLE  
CE  
WE  
I/Ox  
2Ah  
Lock Command  
32  
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