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K9K1208D0C 参数 Datasheet PDF下载

K9K1208D0C图片预览
型号: K9K1208D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 955 K
品牌: SAMSUNG [ SAMSUNG ]
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K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
READY/BUSY  
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random  
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-  
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is  
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and  
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be  
determined by the following guidance.  
Rp  
ibusy  
VCC  
1.8V device - VOL : 0.1V, VOH : VccQ-0.1V  
2.65V device - VOL : 0.4V, VOH : VccQ-0.4V  
3.3V device - VOL : 0.4V, VOH : 2.4V  
Ready Vcc  
R/B  
VOH  
open drain output  
CL  
VOL  
Busy  
tf  
tr  
GND  
Device  
Figure 17. Rp vs tr ,tf & Rp vs ibusy  
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