K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
Ibusy
300n
3m
1.7
200n
100n
2m
1m
120
0.85
60
90
tr
30
0.57
1.7
0.43
1.7
1.7
2K
tf
1.7
4K
1K
3K
Rp(ohm)
@ Vcc = 2.65V, Ta = 25°C , CL = 30pF
300n
3m
2.3
Ibusy
200n
100n
1.1
2m
1m
120
90
tr
60
30
0.75
2.3
2.3
2.3
1K
0.55
tf
2.3
4K
2K
3K
Rp(ohm)
@ Vcc = 3.3V, Ta = 25°C , CL = 100pF
400
2.4
Ibusy
300n
3m
300
1.2
200n
100n
200
0.8
2m
1m
tr
100
3.6
0.6
3.6
3.6
2K
3.6
tf
4K
1K
3K
Rp(ohm)
Rp value guidance
1.85V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
Rp(min, 1.8V part) =
=
3mA + ΣIL
VCC(Max.) - VOL(Max.)
2.5V
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
=
=
IOL + ΣIL
3mA + ΣIL
VCC(Max.) - VOL(Max.)
3.2V
IOL + ΣIL
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
38
SAMSUNG [ SAMSUNG ]
