K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
WPx = H &
Unlock block Command (23h) + Start Block Address
+ Command (24h) + End Block Address
Lock
unlock
Lock
WPx = H &
Unlock block Command (23h) + Start Block Address
+ Command (24h) + End Block Address
Block Lock reset
WPx = L (>100ns)
WPx = H &
Lock block command (2Ah)
Lock
Power-up
WPx = H &
Lock
unlock
Lock
Lock-tight block command (2Ch)
Block Lock reset
WPx = L (>100ns)
WPx = H &
Lock-tight block command (2Ch)
Lock-tight
Lock-tight
unlock
Lock-tight
Figure 15. State diagram of Block Lock
Program/Erase OPERATION(In Locked or Lock-tighten Block)
tLBSY
R/B
Address(&Data Input)
I/Ox
60h(80h)
D0h(10h)
Locked or Lock-tighten Block address
On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10µs(tLBSY)
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SAMSUNG [ SAMSUNG ]
