K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
tCLS
tCLH
tCS
Min
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
0
-
-
10
0
.-
-
tCH
10
25 (1)
0
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
tWP
-
tALS
tALH
tDS
-
10
20
10
45
15
-
-
tDH
-
tWC
-
WE High Hold Time
tWH
-
NOTE :
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter
Symbol
tR
Min
Max
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Transfer from Cell to Register
-
10
10
20
25
-
10
ALE to RE Delay
tAR
-
-
CLE to RE Delay
tCLR
tRR
Ready to RE Low
-
RE Pulse Width
tRP
-
WE High to Busy
tWB
100
-
Read Cycle Time
tRC
50
-
CE Access Time
tCEA
tREA
tRHZ
tCHZ
tOH
45
30
30
20
-
RE Access Time
-
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
-
-
15
15
0
tREH
tIR
-
ns
ns
ns
ms
ns
ns
ns
-
tWHR
tRST
tRB
60
-
-
5/10/500(1)
Last RE High to Busy(at sequential read)
-
100
K9F5608U0B-
Y,P,V,F only
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)(2)
tCRY
tCEH
-
50 +tr(R/B)(3)
-
100
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
13
SAMSUNG [ SAMSUNG ]
