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K9F5616Q0B-DIB0 参数 Datasheet PDF下载

K9F5616Q0B-DIB0图片预览
型号: K9F5616Q0B-DIB0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位, 16M x 16位NAND闪存 [32M x 8 Bit , 16M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 34 页 / 602 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第7页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第8页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第9页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第10页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第12页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第13页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第14页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第15页  
K9F5608U0B-VCB0,VIB0,FCB0,FIB0  
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5608U0B-YCB0,YIB0,PCB0,PIB0  
K9F5608U0B-DCB0,DIB0,HCB0,HIB0  
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5616U0B-YCB0,YIB0,PCB0,PIB0  
K9F5616U0B-DCB0,DIB0,HCB0,HIB0  
FLASH MEMORY  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Parameter  
Symbol  
Unit  
V
K9F56XXQ0B(1.8V)  
K9F56XXU0B(3.3V)  
-0.6 to + 4.6  
VIN/OUT  
VCC  
-0.6 to + 2.45  
-0.2 to + 2.45  
-0.2 to + 2.45  
Voltage on any pin relative to VSS  
-0.6 to + 4.6  
VCCQ  
-0.6 to + 4.6  
K9F56XXX0B-XCB0  
Temperature Under Bias  
-10 to +125  
TBIAS  
°C  
K9F56XXX0B-XIB0  
-40 to +125  
-65 to +150  
5
K9F56XXX0B-XCB0  
Storage Temperature  
TSTG  
Ios  
°C  
K9F56XXX0B-XIB0  
Short Circuit Current  
mA  
NOTE:  
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.  
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.  
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions  
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED OPERATING CONDITIONS  
(Voltage reference to GND, K9F56XXX0B-XCB0 :TA=0 to 70°C, K9F56XXX0B-XIB0 :TA=-40 to 85°C)  
K9F56XXQ0B(1.8V)  
K9F56XXU0B(3.3V)  
Parameter  
Symbol  
Unit  
Min  
1.70  
1.70  
0
Typ.  
1.8  
1.8  
0
Max  
1.95  
1.95  
0
Min  
2.7  
2.7  
0
Typ.  
3.3  
3.3  
0
Max  
3.6  
3.6  
0
Supply Voltage  
Supply Voltage  
Supply Voltage  
VCC  
VCCQ  
VSS  
V
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)  
K9F56XXQ0B(1.8V)  
K9F56XXU0B(3.3V)  
Unit  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Min Typ  
Max  
tRC=50ns, CE=VIL  
IOUT=0mA  
Operat-  
ing  
Sequential Read  
ICC1  
-
8
15  
-
10  
20  
Current Program  
ICC2  
ICC3  
ISB1  
ISB2  
ILI  
-
-
-
-
-
-
-
8
8
-
15  
15  
-
-
-
-
-
-
10  
10  
-
20  
20  
mA  
Erase  
-
Stand-by Current(TTL)  
Stand-by Current(CMOS)  
Input Leakage Current  
Output Leakage Current  
CE=VIH, WP=0V/VCC  
CE=VCC-0.2, WP=0V/VCC  
VIN=0 to Vcc(max)  
VOUT=0 to Vcc(max)  
1
1
10  
-
50  
10  
-
50  
±10  
±10  
±10  
±10  
mA  
ILO  
-
-
VCCQ  
I/O pins  
VCCQ-0.4  
-
2.0  
-
VCCQ+0.3  
+0.3  
Input High Voltage  
VIH  
VCC  
Except I/O pins  
-
VCC-0.4  
-0.3  
-
-
-
2.0  
-0.3  
2.4  
-
-
-
VCC+0.3  
+0.3  
V
Input Low Voltage, All inputs  
Output High Voltage Level  
VIL  
0.4  
0.8  
-
K9F56XXQ0B :IOH=-100mA  
K9F56XXU0B :IOH=-400mA  
VOH  
VCCQ-0.1  
-
K9F56XXQ0B :IOL=100uA  
K9F56XXU0B :IOL=2.1mA  
Output Low Voltage Level  
Output Low Current(R/B)  
VOL  
-
-
0.1  
-
-
-
0.4  
-
K9F56XXQ0B :VOL=0.1V  
K9F56XXU0B :VOL=0.4V  
IOL(R/B)  
3
4
8
10  
mA  
11  
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