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K9F5616Q0B-DIB0 参数 Datasheet PDF下载

K9F5616Q0B-DIB0图片预览
型号: K9F5616Q0B-DIB0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位, 16M x 16位NAND闪存 [32M x 8 Bit , 16M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 34 页 / 602 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0B-VCB0,VIB0,FCB0,FIB0  
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5608U0B-YCB0,YIB0,PCB0,PIB0  
K9F5608U0B-DCB0,DIB0,HCB0,HIB0  
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5616U0B-YCB0,YIB0,PCB0,PIB0  
K9F5616U0B-DCB0,DIB0,HCB0,HIB0  
FLASH MEMORY  
PIN DESCRIPTION  
Pin Name  
Pin Function  
DATA INPUTS/OUTPUTS  
I/O0 ~ I/O7  
(K9F5608X0B)  
I/O0 ~ I/O15  
The I/O pins are used to input command, address and data, and to output data during read operations. The  
I/O pins float to high-z when the chip is deselected or when the outputs are disabled.  
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-  
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and  
output.  
(K9F5616X0B)  
COMMAND LATCH ENABLE  
CLE  
ALE  
The CLE input controls the activating path for commands sent to the command register. When active high,  
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.  
ADDRESS LATCH ENABLE  
The ALE input controls the activating path for address to the internal address registers. Addresses are  
latched on the rising edge of WE with ALE high.  
CHIP ENABLE  
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and  
the device does not return to standby mode in program or erase opertion. Regarding CE control during read  
operation, refer to ’Page read’ section of Device operation.  
CE  
READ ENABLE  
RE  
WE  
WP  
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid  
tREA after the falling edge of RE which also increments the internal column address counter by one.  
WRITE ENABLE  
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of  
the WE pulse.  
WRITE PROTECT  
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage  
generator is reset when the WP pin is active low.  
READY/BUSY OUTPUT  
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or  
random read operation is in process and returns to high state upon completion. It is an open drain output and  
does not float to high-z condition when the chip is deselected or when outputs are disabled.  
R/B  
OUTPUT BUFFER POWER  
VccQ  
VCCQ is the power supply for Output Buffer.  
VccQ is internally connected to Vcc, thus should be biased to Vcc.  
POWER  
Vcc  
Vss  
N.C  
VCC is the power supply for device.  
GROUND  
NO CONNECTION  
Lead is not internally connected.  
GND INPUT FOR ENABLING SPARE AREA  
GND  
DNU  
To do sequential read mode including spare area , connect this input pin to Vss or set to static low state  
or to do sequential read mode excluding spare area , connect this input pin to Vcc or set to static high state.  
DO NOT USE  
Leave it disconnected.  
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.  
Do not leave VCC or VSS disconnected.  
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