K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
FLASH MEMORY
READ1 OPERATION (INTERCEPTED BY CE)
CLE
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
CE
WE
tWB
tCHZ
tOH
tAR
ALE
tR
tRC
RE
N Address
tRR
Read
CMD
Dout N
Dout N+1
Dout N+2
Dout N+3
Col. Add Row Add1 Row Add2
I/Ox
Page(Row)
Address
Column
Address
Busy
R/B
READ2 OPERATION (READ ONE PAGE)
CLE
CE
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
WE
ALE
RE
tR
tWB
tAR
tRR
Dout
n+M+1
Dout
n+M
I/Ox
R/B
50h
Col. Add Row Add1 Row Add2
Dout n+m
Selected
Row
M Address
X8 device : A0~A3 are Valid Address & A4~A7 are Don¢t care
X16 device : A0~A2 are Valid Address & A3~A7 are "L"
m
n
X8 device : n = 512, m = 16
X16 device : n = 256, m = 8
Start
address M
25
SAMSUNG [ SAMSUNG ]
