K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
FLASH MEMORY
Status Read Cycle
tCLR
CLE
CE
tCLS
tCS
tCLH
tCH
tWP
WE
tCEA
tCHZ
tOH
tWHR1
RE
tRHZ
tOH
tDH
tREA
tDS
tIR
Status Output
I/Ox
70h
READ1 OPERATION(READ ONE PAGE)
CLE
1)
tCEH
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
CE
tCHZ
tOH
tWC
WE
tWB
tCRY
tAR
ALE
tRHZ
tOH
tR
tRC
RE
N Address
tRR
Read
CMD
A9~A16
A17~A24
A0~A7
Dout N+1 Dout N+2 Dout N+3
Dout m
tRB
Dout N
I/Ox
R/B
Column
Address
Page(Row)
Address
Busy
1)
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
NOTES : 1) is only valid On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
24
SAMSUNG [ SAMSUNG ]
