欢迎访问ic37.com |
会员登录 免费注册
发布采购

K9F5608D0C 参数 Datasheet PDF下载

K9F5608D0C图片预览
型号: K9F5608D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位, 16M x 16位NAND闪存 [32M x 8 Bit , 16M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 42 页 / 679 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F5608D0C的Datasheet PDF文件第17页浏览型号K9F5608D0C的Datasheet PDF文件第18页浏览型号K9F5608D0C的Datasheet PDF文件第19页浏览型号K9F5608D0C的Datasheet PDF文件第20页浏览型号K9F5608D0C的Datasheet PDF文件第22页浏览型号K9F5608D0C的Datasheet PDF文件第23页浏览型号K9F5608D0C的Datasheet PDF文件第24页浏览型号K9F5608D0C的Datasheet PDF文件第25页  
K9F5608Q0C  
K9F5608D0C  
K9F5608U0C  
K9F5616Q0C  
K9F5616D0C  
K9F5616U0C  
FLASH MEMORY  
System Interface Using CE don’t-care.  
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal  
528byte(x8 device), 264word(x16 device) page registers are utilized as seperate buffers for this operation and the system design gets  
more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during  
the data-loading and reading would provide significant savings in power consumption.  
Figure 6. Program Operation with CE don’t-care.  
CLE  
CE don’t-care  
CE  
WE  
ALE  
I/Ox  
80h  
Start Add.(3Cycle)  
Data Input  
Data Input  
10h  
tCS  
tCH  
tCEA  
CE  
RE  
CE  
tREA  
tWP  
tOH  
WE  
I/O0~15  
out  
Figure 7. Read Operation with CE don’t-care.  
CLE  
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P  
CE must be held  
CE don’t-care  
low during tR  
CE  
RE  
ALE  
tR  
R/B  
WE  
I/Ox  
Data Output(sequential)  
00h  
Start Add.(3Cycle)  
21  
 复制成功!