K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
NVB
4,026
-
4,096
Blocks
NOTE :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
cycles.
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9F12XXX0A-XCB0 :TA=0 to 70°C, K9F12XXX0A-XIB0:TA=-40 to 85°C
K9F12XXD0A : Vcc=2.4V~2.9V , K9F12XXU0A : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F12XXD0A
0V to VccQ
5ns
K9F12XXU0A
0.4V to 2.4V
5ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
VccQ/2
1.5V
K9F12XXD0A:Output Load (VccQ:2.65V +/-10%)
K9F12XXU0A:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF1 TTL GATE and CL=50pF
1 TTL GATE and CL=100pF
K9F12XXU0A:Output Load (VccQ:3.3V +/-10%)
-
CAPACITANCE(TA=25°C, VCC=2.65V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
10
Unit
pF
Input/Output Capacitance
Input Capacitance
CI/O
VIL=0V
-
-
CIN
VIN=0V
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
H
L
ALE
L
CE
L
WE
RE
H
WP
X
Mode
Command Input
Read Mode
Write Mode
H
L
L
H
X
Address Input(4clock)
Command Input
H
L
L
H
H
H
L
L
H
H
Address Input(4clock)
L
L
H
H
Data Input
Data Output
L
L
L
H
H
X
L
L
L
H
H
X
During Read(Busy) on K9F1208U0A-Y,P,V,F or K9F1208D0A-Y,P
During Read(Busy) on the devices except K9F1208U0A-Y,P,V,F or
K9F1208D0A-Y,P
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
X
H
During Program(Busy)
During Erase(Busy)
Write Protect
H
L
X(1)
X
(2)
Stand-by
0V/VCC
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
13
SAMSUNG [ SAMSUNG ]
