K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
PROGRAM / ERASE CHARACTERISTICS
Parameter
Program Time
Symbol
tPROG
Min
Typ
Max
500
10
1
Unit
ms
-
200
Dummy Busy Time for Multi Plane Program
tDBSY
1
-
ms
Main Array
Spare Array
-
-
-
cycle
cycles
ms
Number of Partial Program Cycles
in the Same Page
Nop
-
2
Block Erase Time
tBERS
2
3
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
Min
Max
Parameter
Symbol
Unit
K9F12XXD0A K9F12XXU0A K9F12XXD0A K9F12XXU0A
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
tCLS
tCLH
tCS
0
10
0
0
10
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCH
10
25(1)
0
10
25(1)
0
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
tALS
tALH
tDS
10
20
10
50
15
10
20
10
50
15
tDH
tWC
tWH
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
14
SAMSUNG [ SAMSUNG ]
