K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F12XXX0A
Parameter
Symbol
Test Conditions
2.65V
3.3V
Unit
mA
mA
Min Typ Max Min Typ Max
tRC=50ns, CE=VIL
IOUT=0mA
Sequential Read ICC1
-
10
20
-
10
20
Operating
Current
Program
Erase
ICC2
ICC3
-
-
-
-
-
-
-
-
10
10
-
20
20
-
-
-
-
-
-
10
10
-
20
20
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ISB1 CE=VIH, WP=0V/VCC
1
1
ISB2 CE=VCC-0.2, WP=0V/VCC
10
-
50
10
-
50
ILI
VIN=0 to Vcc(max)
±10
±10
±10
±10
ILO
VOUT=0 to Vcc(max)
-
-
VCCQ
-0.4
VCCQ
+0.3
VCCQ
+0.3
I/O pins
-
-
2.0
2.0
-
-
Input High Voltage
VIH*
VCC
-0.4
VCC
VCC
Except I/O pins
-
+0.3
+0.3
Input Low Voltage, All
inputs
VIL*
-0.3
-
0.5 -0.3
-
0.8
-
V
K9F12XXD0A :IOH=-100mA VCCQ
K9F12XXU0A :IOH=-400mA -0.4
Output High Voltage Level
Output Low Voltage Level
VOH
-
-
0.4
-
2.4
-
-
K9F12XXD0A :IOL=100mA
VOL
-
-
-
0.4
-
K9F12XXU0A :IOL=2.1mA
K9F12XXD0A :VOL=0.1V
Output Low Current(R/B) IOL(R/B)
3
4
8
10
mA
K9F12XXU0A :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
12
SAMSUNG [ SAMSUNG ]
