K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
AC CHARACTERISTICS FOR OPERATION
Min
Max
Parameter
Symbol
Unit
K9F12XXD0A K9F12XXU0A K9F12XXD0A K9F12XXU0A
Data Transfer from Cell to Register
ALE to RE Delay
tR
-
10
10
20
25
-
-
10
10
20
25
-
12
12
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
tAR
-
-
CLE to RE Delay
tCLR
tRR
-
-
Ready to RE Low
-
-
RE Pulse Width
tRP
-
-
WE High to Busy
tWB
tRC
100
100
Read Cycle Time
50
-
50
-
-
-
RE Access Time
tREA
tCEA
tRHZ
tCHZ
tOH
30
30
CE Access Time
-
-
45
45
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
-
-
30
30
-
-
20
20
15
15
0
15
15
0
-
-
tREH
tIR
-
-
Output Hi-Z to RE Low
WE High to RE Low
-
-
tWHR
tRST
60
-
60
-
-
-
5/10/500(1)
5/10/500(1)
Device resetting time(Read/Program/Erase)
Parameter
Symbol
tRB
Min
Max
Unit
ns
K9F1208U0A-
Y,P,V,F or
K9F1208D0A-
Y,P only
Last RE High to Busy(at sequential read)
-
-
100
50 +tr(R/B)(3)
-
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)(2)
tCRY
ns
tCEH
100
ns
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
15
SAMSUNG [ SAMSUNG ]
