PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016C1D
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
V
Supply Voltage
VCC
4.5
5.0
5.5
Ground
VSS
0
0
-
0
V
Input High Voltage
Input Low Voltage
VIH
2.2
VCC+0.5***
0.8
V
VIL
-0.5**
-
V
*
The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width £ 8ns) for I £ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width £ 8ns) for I £ 20mA.
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
Output Leakage Current
ILI
VIN=VSS to VCC
-2
2
2
mA
ILO
CS =VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
mA
Operating Current
Standby Current
ICC
Min. Cycle, 100% Duty
CS =VIL, VIN=VIH orVIL, IOUT=0mA
Com.
Ind.
10ns
10ns
-
-
-
-
65
75
20
5
mA
mA
ISB
Min. Cycle, CS=VIH
ISB1
f=0MHz, CS ³ VCC-0.2V,
VIN³ VCC-0.2V or VIN£0.2V
Output Low Voltage Level
Output High Voltage Level
VOL
VOH
IOL=8mA
IOH=-4mA
-
0.4
-
V
V
2.4
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Symbol
Test Conditions
VI/O=0V
TYP
Max
Unit
Input/Output Capacitance
Input Capacitance
CI/O
-
-
8
6
pF
pF
CIN
VIN=0V
* Capacitance is sampled and not 100% tested.
Rev 2.0
June 2003
- 5 -
SAMSUNG [ SAMSUNG ]
