CMOS SDRAM
SDRAM 256Mb E-die (x4, x8, x16)
66MHz and 100MHz/133MHz Pull-up
0.5 1.5 2.5
IBIS SPECIFICATION
0
1
2
3
3.5
IOH Characteristics (Pull-up)
0
-100
-200
-300
-400
-500
-600
100MHz
133MHz
Min
100MHz
133MHz
Max
I (mA)
-2.4
66MHz
Min
Voltage
(V)
3.45
3.3
3.0
2.6
2.4
2.0
1.8
1.65
1.5
1.4
1.0
0.0
I (mA)
I (mA)
-27.3
-74.1
0.0
-21.1
-34.1
-58.7
-67.3
-73.0
-77.9
-80.8
-88.6
-93.0
-0.7
-7.5
-129.2
-153.3
-197.0
-226.2
-248.0
-269.7
-284.3
-344.5
-502.4
-13.3
-27.5
-35.5
-41.1
-47.9
-52.4
-72.5
-93.0
Voltage
IOH Min (100MHz)
IOH Min (66MHz)
IOH Max (66 and 100MHz)
66MHz and 100MHz/133MHz Pull-down
IOL Characteristics (Pull-down)
250
200
150
100
50
100MHz
133MHz
Min
100MHz
133MHz
Max
66MHz
Min
Voltage
(V)
0.0
I (mA)
0.0
I (mA)
0.0
I (mA)
0.0
0.4
27.5
70.2
17.7
26.9
33.3
37.6
46.6
48.0
49.5
50.7
51.5
54.2
54.9
0.65
0.85
1.0
1.4
1.5
1.65
1.8
1.95
3.0
41.8
51.6
58.0
70.7
72.9
75.4
77.0
77.6
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
80.3
81.4
0
3.45
0
0.5
1
1.5
2
2.5
3
3.5
Voltage
IOL Min (100MHz)
IOL Min (66MHz)
IOL Max (100MHz)
Rev. 1.3 August 2004
SAMSUNG [ SAMSUNG ]
