K4M56323LE - M(E)E/N/S/C/L/R
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Version
Parameter
Symbol
Test Condition
Unit Note
-80
-1H
-1L
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Operating Current
(One Bank Active)
ICC1
140
140
130
mA
mA
1
ICC2P CKE ≤ VIL(max), tCC = 10ns
1.2
1.2
Precharge Standby Current in
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC2N
20
10
Input signals are changed one time during 20ns
Precharge Standby Current
in non power-down mode
mA
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC2NS
Input signals are stable
ICC3P CKE ≤ VIL(max), tCC = 10ns
8
8
Active Standby Current
in power-down mode
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
ICC3N
45
40
mA
mA
Active Standby Current
in non power-down mode
(One Bank Active)
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC3NS
Input signals are stable
IO = 0 mA
Operating Current
(Burst Mode)
Page burst
4Banks Activated
tCCD = 2CLKs
ICC4
180
300
150
150
270
mA
1
Refresh Current
ICC5
ICC6
tRC ≥ tRC(min)
290
1500
1000
mA
uA
°C
2
4
5
3
-E/C
-N/L
Internal TCSR
4Banks
2Banks
1Bank
Max 40
600
Max 85/70
1000
Self Refresh Current
CKE ≤ 0.2V
-S/R
uA
6
500
800
450
700
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C
4. K4M56323LE-M(E)E/C**
5. K4M56323LE-M(E)N/L**
6. K4M56323LE-M(E)S/R**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
February 2004
SAMSUNG [ SAMSUNG ]
