K4M56323LE - M(E)E/N/S/C/L/R
Mobile-SDRAM
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
A9*2
BA0 ~ BA1
Address
A11 ~ A10/AP
A8
A7
A6
A5
A4
A3
A2
A1
A0
"0" Setting for
Normal MRS
RFU*1
Function
W.B.L
Test Mode
CAS Latency
BT
Burst Length
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Type
Burst Length
A8 A7
Type
Mode Register Set
Reserved
A6 A5 A4
Latency
Reserved
1
A3
0
A2
A1
0
A0
0
BT=0
BT=1
0
0
1
1
0
1
0
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Sequential
Interleave
0
0
0
0
1
1
1
1
1
2
4
8
1
2
4
8
1
0
1
Reserved
2
Mode Select
1
0
Reserved
3
BA1 BA0
Mode
1
1
Write Burst Length
Length
Reserved
Reserved
Reserved
Reserved
0
0
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
Setting
for Nor-
mal MRS
A9
0
0
1
0
0
Burst
1
0
1
Single Bit
1
1
Full Page Length x32 : 256Mb(512)
Register Programmed with Extended MRS
Address
BA1
BA0
A11 ~ A10/AP
A9
RFU*1
A8
A7
A6
A5
A4
A3
A2
A1
A0
RFU*1
Function
Mode Select
DS
PASR
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
Mode Select
Driver Strength
A5 Driver Strength
Full
PASR
BA1
BA0
Mode
A6
0
A2
A1
A0
# of Banks
4 Banks
0
0
1
1
0
1
0
1
Normal MRS
Reserved
0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
1/2
2 Banks
EMRS for Mobile SDRAM
Reserved
1
Reserved
Reserved
1 Bank
1
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved Address
A11~A10/AP
0
A9
0
A8
0
A7
0
A4
0
A3
0
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
February 2004
SAMSUNG [ SAMSUNG ]
