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K4H561638D-GCB0 参数 Datasheet PDF下载

K4H561638D-GCB0图片预览
型号: K4H561638D-GCB0
PDF下载: 下载PDF文件 查看货源
内容描述: DDR 256Mb的 [DDR 256Mb]
分类和应用: 双倍数据速率
文件页数/大小: 26 页 / 291 K
品牌: SAMSUNG [ SAMSUNG ]
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K4H560438D  
DDR SDRAM  
-GC(L)B3  
(DDR333)  
-GC(L)A2  
(DDR266A)  
-GC(L)B0  
(DDR266B)  
Parameter  
Symbol  
Unit Note  
Min  
Max  
Min  
Max  
Min Max  
Mode register set cycle time  
DQ & DM setup time to DQS  
DQ & DM hold time to DQS  
tMRD  
tDS  
12  
15  
15  
ns  
0.45  
0.5  
0.5  
ns  
ns  
7,8,9  
7,8,9  
tDH  
0.45  
0.5  
0.5  
Control & Address input pulse width  
DQ & DM input pulse width  
Power down exit time  
tIPW  
2.2  
1.75  
6
2.2  
1.75  
7.5  
2.2  
1.75  
7.5  
ns  
ns  
tDIPW  
tPDEX  
tXSNR  
tXSRD  
tREFI  
ns  
Exit self refresh to non-Read command  
Exit self refresh to read command  
Refresh interval time  
75  
75  
75  
ns  
4
200  
7.8  
200  
7.8  
200  
7.8  
tCK  
us  
1
5
tHP  
-tQHS  
tHP  
-tQHS  
tHP  
-tQHS  
Output DQS valid window  
Clock half period  
tQH  
tHP  
-
-
-
-
-
-
ns  
ns  
tCLmin  
or tCHmin  
tCLmin  
or tCHmin  
tCLmin  
or tCHmin  
Data hold skew factor  
tQHS  
0.5  
0.6  
0.75  
0.6  
0.75  
0.6  
ns  
DQS write postamble time  
tWPST  
0.4  
18  
0.4  
20  
0.4  
20  
tCK  
3
Active to Read with Auto precharge  
command  
tRAP  
Autoprecharge write recovery +  
Precharge time  
(tWR/tCK)  
+
(tWR/tCK)  
+
(tWR/tCK)  
+
tDAL  
tCK  
11  
(tRP/tCK)  
(tRP/tCK)  
(tRP/tCK)  
1. Maximum burst refresh cycle : 8  
2. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from  
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,  
DQS could be High at this time, depending on tDQSS.  
3. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this parameter,  
but system performance (bus turnaround) will degrade accordingly.  
4. A write command can be applied with tRCD satisfied after this command.  
5. For registered DIMMs, tCL and tCH are 45% of the period including both the half period jitter (tJIT(HP)) of the PLL and the half period  
jitter due to crosstalk (tJIT(crosstalk)) on the DIMM.  
6. Input Setup/Hold Slew Rate Derating  
Input Setup/Hold Slew Rate  
tIS  
(ps)  
0
tIH  
(ps)  
0
(V/ns)  
0.5  
0.4  
+50  
+100  
+50  
+100  
0.3  
This derating table is used to increase t /t in the case where the input slew rate is below 0.5V/ns. Input setup/hold slew rate  
IS IH  
based on the lesser of AC-AC slew rate and DC-DC slew rate.  
7. I/O Setup/Hold Slew Rate Derating  
I/O Setup/Hold Slew Rate  
tDS  
(ps)  
0
tDH  
(ps)  
0
(V/ns)  
0.5  
0.4  
+75  
+150  
+75  
+150  
0.3  
This derating table is used to increase t /t in the case where the I/O slew rate is below 0.5V/ns. I/O setup/hold slew rate  
DS DH  
based on the lesser of AC-AC slew rate and DC-DC slew rate.  
Rev. 2.2 Mar. ’03  
- 12 -  
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