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K4H561638D-GCB0 参数 Datasheet PDF下载

K4H561638D-GCB0图片预览
型号: K4H561638D-GCB0
PDF下载: 下载PDF文件 查看货源
内容描述: DDR 256Mb的 [DDR 256Mb]
分类和应用: 双倍数据速率
文件页数/大小: 26 页 / 291 K
品牌: SAMSUNG [ SAMSUNG ]
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K4H560838D  
DDR SDRAM  
Notes 1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and DC offset on  
VREF, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on VREF and internal DRAM noise  
coupled TO VREF, both of which may result in VREF noise. VREF should be de-coupled with an inductance of 3nH.  
2. V is not applied directly to the device. V is a system supply for signal termination resistors, is expected to be set equal to  
TT  
TT  
VREF, and must track variations in the DC level of VREF  
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.  
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in  
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHZ.  
5. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.  
(VDD=2.7V, T = 10°C)  
DDR SDRAM IDD spec table  
32Mx8  
Symbol  
Unit  
Notes  
K4H560838D-GC(L)B3  
(DDR333)  
K4H560838D-GC(L)A2, B0  
(DDR266A/B)  
IDD0  
IDD1  
90  
120  
3
80  
110  
3
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
IDD2P  
IDD2F  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
25  
20  
20  
18  
35  
30  
55  
45  
170  
170  
180  
3
140  
140  
165  
3
IDD6  
Normal  
Low power  
IDD7A  
1.5  
325  
1.5  
280  
Optional  
AC Operating Conditions  
Max  
Parameter/Condition  
Symbol  
Min  
Unit  
Note  
Input High (Logic 1) Voltage, DQ, DQS and DM signals  
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.  
Input Differential Voltage, CK and CK inputs  
VIH(AC)  
VIL(AC)  
VID(AC)  
VREF + 0.31  
V
V
V
V
3
3
1
2
VREF - 0.31  
VDDQ+0.6  
0.7  
Input Crossing Point Voltage, CK and CK inputs  
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2  
Note 1. VID is the magnitude of the difference between the input level on CK and the input on CK.  
2. The value of V is expected to equal 0.5*V of the transmitting device and must track variations in the DC level of the same.  
IX  
DDQ  
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simu  
lation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.  
Overshoot/Undershoot specification  
Specification  
Parameter  
Address &  
Control pins  
Data pins  
Maximum peak amplitude allowed for overshoot  
1.6 V  
1.6 V  
1.2V  
1.2V  
Maximum peak amplitude allowed for undershoot  
The area between the overshoot signal and VDD must be less than or equal to  
The area between the undershoot signal and GND must be less than or equal to  
4.5 V-ns  
4.5 V-ns  
2.5 V-ns  
2.5 V-ns  
Rev. 2.2 Mar. ’03  
- 16 -  
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