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K4H561638D-GCB0 参数 Datasheet PDF下载

K4H561638D-GCB0图片预览
型号: K4H561638D-GCB0
PDF下载: 下载PDF文件 查看货源
内容描述: DDR 256Mb的 [DDR 256Mb]
分类和应用: 双倍数据速率
文件页数/大小: 26 页 / 291 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K4H561638D-GCB0的Datasheet PDF文件第7页浏览型号K4H561638D-GCB0的Datasheet PDF文件第8页浏览型号K4H561638D-GCB0的Datasheet PDF文件第9页浏览型号K4H561638D-GCB0的Datasheet PDF文件第10页浏览型号K4H561638D-GCB0的Datasheet PDF文件第12页浏览型号K4H561638D-GCB0的Datasheet PDF文件第13页浏览型号K4H561638D-GCB0的Datasheet PDF文件第14页浏览型号K4H561638D-GCB0的Datasheet PDF文件第15页  
K4H560438D  
DDR SDRAM  
AC Timming Parameters & Specifications  
B3  
(DDR333)  
A2  
B0  
(DDR266B)  
(DDR266A)  
Parameter  
Symbol  
Unit  
Note  
Min  
Max  
Min  
Max  
Min  
Max  
Row cycle time  
tRC  
tRFC  
tRAS  
tRCD  
tRP  
60  
72  
65  
75  
65  
75  
ns  
ns  
Refresh row cycle time  
Row active time  
42  
70K  
45  
120K  
45  
120K  
ns  
RAS to CAS delay  
18  
20  
20  
ns  
Row precharge time  
18  
20  
20  
ns  
Row active to Row active delay  
Write recovery time  
tRRD  
tWR  
12  
15  
15  
ns  
15  
15  
15  
ns  
Last data in to Read command  
Col. address to Col. address delay  
tWTR  
tCCD  
1
1
1
tCK  
tCK  
ns  
1
1
1
CL=2.0  
CL=2.5  
7.5  
6
12  
12  
7.5  
7.5  
0.45  
0.45  
-0.75  
-0.75  
-
12  
12  
10  
12  
12  
5
5
Clock cycle time  
tCK  
7.5  
0.45  
0.45  
-0.75  
-0.75  
-
ns  
Clock high level width  
tCH  
tCL  
0.45  
0.45  
-0.6  
-0.7  
-
0.55  
0.55  
+0.6  
+0.7  
0.4  
0.55  
0.55  
+0.75  
+0.75  
0.5  
0.55  
0.55  
+0.75  
+0.75  
0.5  
tCK  
tCK  
ns  
Clock low level width  
DQS-out access time from CK/CK  
tDQSCK  
tAC  
Output data access time from CK/CK  
Data strobe edge to ouput data edge  
Read Preamble  
ns  
tDQSQ  
tRPRE  
tRPST  
tDQSS  
tWPRES  
tWPRE  
tDSS  
tDSH  
tDQSH  
tDQSL  
tDSC  
tIS  
ns  
5
2
0.9  
0.4  
0.75  
0
1.1  
0.9  
0.4  
0.75  
0
1.1  
0.9  
0.4  
0.75  
0
1.1  
tCK  
tCK  
tCK  
ns  
Read Postamble  
0.6  
0.6  
0.6  
CK to valid DQS-in  
1.25  
1.25  
1.25  
DQS-in setup time  
DQS-in hold time  
0.25  
0.2  
0.2  
0.35  
0.35  
0.9  
0.75  
0.75  
0.8  
0.8  
-0.7  
-0.7  
0.5  
0.5  
1.0  
0.67  
0.25  
0.2  
0.2  
0.35  
0.35  
0.9  
0.9  
0.9  
1.0  
1.0  
-0.75  
-0.75  
0.5  
0.5  
1.0  
0.67  
0.25  
0.2  
0.2  
0.35  
0.35  
0.9  
0.9  
0.9  
1.0  
1.0  
-0.75  
-0.75  
0.5  
0.5  
1.0  
0.67  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
ns  
DQS falling edge to CK rising-setup time  
DQS falling edge from CK rising-hold time  
DQS-in high level width  
DQS-in low level width  
DQS-in cycle time  
1.1  
1.1  
1.1  
Address and Control Input setup time(fast)  
Address and Control Input hold time(fast)  
Address and Control Input setup time(slow)  
Address and Control Input hold time(slow)  
Data-out high impedence time from CK/CK  
Data-out low impedence time from CK/CK  
Input Slew Rate(for input only pins)  
Input Slew Rate(for I/O pins)  
Output Slew Rate(x4,x8)  
6
6
6
6
tIH  
ns  
tIS  
ns  
tIH  
ns  
tHZ  
+0.7  
+0.7  
+0.75  
+0.75  
+0.75  
+0.75  
ns  
tLZ  
ns  
tSL(I)  
tSL(IO)  
tSL(O)  
V/ns  
V/ns  
V/ns  
6
7
4.5  
1.5  
4.5  
1.5  
4.5  
1.5  
10  
Output Slew Rate Matching Ratio(rise to fall) tSLMR  
Rev. 2.2 Mar. ’03  
- 11 -  
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