K4F170411C, K4F160411C
K4F170412C, K4F160412C
CMOS DRAM
AC CHARACTERISTICS (Continued)
-50
-60
Parameter
Symbol
tDS
Units
Note
Min
0
Max
Min
0
Max
Data set-up time
ns
9
9
Data hold time
10
10
ns
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
tDH
Refresh period (2K, Normal)
32
64
32
64
tREF
tREF
tREF
tWCS
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPA
tPC
Refresh period (4K, Normal)
Refresh period (L-ver)
128
128
Write command set-up time
0
0
7
7
7
7
CAS to W delay time
36
73
48
53
5
40
85
55
60
5
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
10
5
10
5
Access time from CAS precharge
Fast Page cycle time
30
35
3
35
76
10
50
30
40
85
10
60
35
Fast Page read-modify-write cycle time
CAS precharge time (Fast Page cycle)
RAS pulse width (Fast Page cycle)
RAS hold time from CAS precharge
OE access time
tPRWC
tCP
200K
13
200K
15
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tWTS
tWTH
tWRP
tWRH
tRASS
tRPS
tCHS
OE to data delay
13
0
15
0
Output buffer turn off delay time from OE
OE command hold time
13
15
6
13
10
10
10
10
100
90
-50
15
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
10
11
11
10
10
10
100
110
-50
13,14,15
13,14,15
13,14,15
SAMSUNG [ SAMSUNG ]
