K4F170411C, K4F160411C
K4F170412C, K4F160412C
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Rating
Parameter
Symbol
Units
3.3V
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
1
5V
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
VIN,VOUT
VCC
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
1
V
V
Tstg
°C
W
Power Dissipation
PD
Short Circuit Output Current
IOS Address
50
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
3.3V
5V
Typ
5.0
0
Parameter
Symbol
Units
Min
3.0
0
Typ
Max
3.6
0
Min
4.5
0
Max
5.5
0
Supply Voltage
VCC
VSS
VIH
VIL
3.3
V
V
V
V
Ground
0
-
*1
*1
Input High Voltage
Input Low Voltage
2.0
2.4
-
VCC+0.3
0.8
VCC+1.0
0.8
*2
*2
-
-
-0.3
-1.0
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0£VIN£VIN+0.3V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V£VOUT£VCC)
IO(L)
-5
5
uA
3.3V
Output High Voltage Level(IOH=-2mA)
Output Low Voltage Level(IOL=2mA)
VOH
VOL
2.4
-
-
V
V
0.4
Input Leakage Current (Any input 0£VIN£VIN+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
-5
5
5
uA
uA
Output Leakage Current
(Data out is disabled, 0V£VOUT£VCC)
IO(L)
5V
Output High Voltage Level(IOH=-5mA)
Output Low Voltage Level(IOL=4.2mA)
VOH
VOL
2.4
-
-
V
V
0.4
SAMSUNG [ SAMSUNG ]
