64M DDR SDRAM
K4D64163HF
AC CHARACTERISTICS (I)
-33
-36
-40
-50
-60
Unit Note
Parameter
Row cycle time
Symbol
Min
17
20
11
6
Max
Min
16
18
10
5
Max
Min
14
16
9
Max
Min
12
14
8
Max
Min
10
12
7
Max
-
-
-
-
-
tRC
tCK
tCK
tCK
tCK
tCK
tCK
Refresh row cycle time
Row active time
-
-
-
-
-
tRFC
tRAS
tRCD
tRP
100K
100K
100K
100K
100K
RAS to CAS delay
-
-
-
-
-
-
5
-
-
-
4
-
-
-
3
-
-
-
Row precharge time
Row active to Row active
6
5
5
4
3
2
2
2
2
2
tRRD
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
3
3
-
-
3
3
-
-
3
3
-
-
2
3
-
-
2
3
-
-
tCK
tCK
1
tWR
1
1
tWR_A
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
2
1
3
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
tCDLR
tCCD
tMRD
tCK
tCK
tCK
Auto precharge write recovery
+ Precharge
9
-
-
-
8
-
-
8
-
-
7
-
-
6
-
-
tCK
tCK
tDAL
tXSR
Exit self refresh to read com-
200
200
200
200
200
2tCK
+tIS
2tCK
+tIS
1tCK
+tIS
1tCK
+tIS
1tCK
+tIS
Power down exit time
Refresh interval time
-
-
-
-
-
-
-
-
ns
us
tPDEX
tREF
15.6
15.6
15.6
15.6
15.6
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
AC CHARACTERISTICS (II)
(Unit : Number of Clock)
K4D64163HF-TC33
Unit
tCK
tCK
tCK
tCK
tCK
Frequency
Cas Latency
tRC
17
16
14
12
10
tRFC
20
18
16
14
tRAS
11
10
9
8
7
tRCD
tRP
6
5
5
4
tRRD
tDAL
300MHz (3.0ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
3
3
3
3
3
6
5
5
4
3
2
2
2
2
2
9
8
8
7
6
12
3
K4D64163HF-TC36
Frequency
275MHz (3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Unit
tCK
tCK
tCK
tCK
Cas Latency
tRC
16
14
12
10
tRFC
18
16
14
12
tRAS
10
9
8
7
tRCD
tRP
5
5
4
3
tRRD
tDAL
3
3
3
3
5
5
4
3
2
2
2
2
8
8
7
6
K4D64163HF-TC40
Frequency
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Unit
tCK
tCK
tCK
Cas Latency
tRC
14
12
tRFC
16
14
tRAS
tRCD
tRP
5
4
tRRD
tDAL
3
3
3
9
8
7
5
4
3
2
2
2
8
7
6
10
12
3
- 14 -
Rev. 1.1(Aug. 2002)
SAMSUNG [ SAMSUNG ]
