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K4D64163HF-TC33 参数 Datasheet PDF下载

K4D64163HF-TC33图片预览
型号: K4D64163HF-TC33
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的×4银行双数据速率同步DRAM [1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 16 页 / 164 K
品牌: SAMSUNG [ SAMSUNG ]
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64M DDR SDRAM  
K4D64163HF  
C CHARACTERISTICS  
-33  
-36  
-40  
-50  
-60  
Sym-  
Unit Note  
Parameter  
bol  
Min  
3.3  
0.45  
0.45  
-0.6  
-0.6  
-
Max  
4.0  
0.55  
0.55  
0.6  
0.6  
0.4  
1.1  
0.6  
1.25  
-
Min  
3.6  
0.45  
0.45  
-0.6  
-0.6  
-
Max  
6
Min  
4.0  
0.45  
0.45  
-0.6  
-0.6  
-
Max  
7
Min  
5.0  
0.45  
0.45  
-0.7  
-0.7  
-
Max  
10  
0.55  
0.55  
0.7  
0.7  
0.45  
1.1  
0.6  
1.2  
-
Min  
6.0  
Max  
10  
0.55  
0.55  
0.75  
0.75  
0.5  
1.1  
0.6  
1.25  
-
K cycle time  
CL=3  
ns  
tCK  
tCK  
ns  
tCK  
tCH  
tCL  
K high level width  
K low level width  
0.55  
0.55  
0.6  
0.6  
0.4  
1.1  
0.6  
1.15  
-
0.55  
0.55  
0.6  
0.6  
0.4  
1.1  
0.6  
1.15  
-
0.45  
0.45  
-0.75  
-0.75  
-
QS out access time from CK  
utput access time from CK  
ata strobe edge to Dout edge  
ead preamble  
tDQSCK  
tAC  
ns  
ns  
1
tDQSQ  
tRPRE  
tRPST  
tDQSS  
tWPRES  
tWPREH  
tWPST  
tDQSH  
tDQSL  
tIS  
0.9  
0.4  
0.8  
0
0.9  
0.4  
0.85  
0
0.9  
0.4  
0.85  
0
0.9  
0.4  
0.8  
0
0.9  
tCK  
tCK  
tCK  
ns  
ead postamble  
0.4  
K to valid DQS-in  
0.75  
0
QS-In setup time  
QS-in hold time  
0.45  
0.4  
0.4  
0.4  
0.9  
0.9  
0.4  
0.4  
-
0.35  
0.4  
0.4  
0.4  
0.9  
0.9  
0.4  
0.4  
-
0.35  
0.4  
0.4  
0.4  
0.9  
0.9  
0.4  
0.4  
-
0.3  
0.4  
0.4  
0.4  
1.0  
1.0  
0.45  
0.45  
-
0.25  
0.4  
-
tCK  
tCK  
tCK  
tCK  
ns  
QS write postamble  
0.6  
0.6  
0.6  
-
0.6  
0.6  
0.6  
-
0.6  
0.6  
0.6  
-
0.6  
0.6  
0.6  
-
0.6  
0.6  
0.6  
-
QS-In high level width  
QS-In low level width  
ddress and Control input setup  
ddress and Control input hold  
Q and DM setup time to DQS  
Q and DM hold time to DQS  
0.4  
0.4  
1.1  
-
-
-
-
1.1  
-
ns  
tIH  
tDS  
tDH  
-
-
-
-
0.5  
-
ns  
-
-
-
-
0.5  
-
ns  
tCLmin  
or  
tCHmin  
tCLmin  
or  
tCHmin  
tCLmin  
or  
tCHmin  
tCLmin  
or  
tCHmin  
tCLmin  
or  
tCHmin  
lock half period  
-
-
-
-
-
-
-
-
-
ns  
ns  
1
1
tHP  
tQH  
tHP-  
0.45  
ata output hold time from DQS  
tHP-0.4  
tHP-0.4  
tHP-0.4  
tHP-0.5  
ote 1 :  
The JEDEC DDR specification currently defines the output data valid window(tDV) as the time period when the data  
strobe and all data associated with that data strobe are coincidentally valid.  
- The previously used definition of tDV(=0.35tCK) artificially penalizes system timing budgets by assuming the worst  
ase  
output vaild window even then the clock duty cycle applied to the device is better than 45/55%  
A new AC timing term, tQH which stands for data output hold time from DQS is difined to account for clock duty cycle  
variation and replaces tDV  
tQHmin = tHP-X where  
. tHP=Minimum half clock period for any given cycle and is defined by clock high or clock low time(tCH,tCL)  
. X=A frequency dependent timing allowance account for tDQSQmax  
- 13 -  
Rev. 1.1(Aug. 2002)  
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