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RT8206B 参数 Datasheet PDF下载

RT8206B图片预览
型号: RT8206B
PDF下载: 下载PDF文件 查看货源
内容描述: 高效率,主电源控制器>用于笔记本电脑 [High-Efficiency, Main Power Supply Controllers for Notebook Computers]
分类和应用: 电脑控制器
文件页数/大小: 26 页 / 360 K
品牌: RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
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RT8206A/B  
The maximum power dissipation depends on operating  
ambient temperature for fixed TJ(MAX) and thermal  
resistance θJA. For RT8206A/B packages, the Figure 7  
of derating curves allows the designer to see the effect of  
rising ambient temperature on the maximum power  
allowed.  
` All sensitive analog traces and components such as  
VOUTx, FBx, GND, ENx, PGOODx, ILIMx, VCC, and  
TONshould be placed away from high-voltage switching  
nodes such as PHASEx, LGATEx, UGATEx or BOOTx  
nodes to avoid coupling. Use internal layer(s) as ground  
plane(s) and shield the feedback trace from power traces  
and components.  
3.0  
2.8  
Four Layers PCB  
` Gather ground terminal of VIN capacitor(s), VOUTx  
capacitor(s), and source of low-side MOSFETs as close  
as possible. PCB trace defined as PHASEx node, which  
connects to source of high-side MOSFET, drain of low-  
side MOSFET and high-voltage side of the inductor,  
should be as short and wide as possible.  
2.6  
2.4  
2.2  
WQFN -32L 5x5  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
25  
50  
75  
100  
125  
Ambient Temperature (°C)  
Figure 7.Derating Curves for RT8206A/B Packages  
Layout Considerations  
Layout is very important in high frequency switching  
converter design. If the layout is designed improperly, the  
PCB could radiate excessive noise and contribute to the  
converter instability. The following points must be followed  
for a proper layout of RT8206A/B.  
` Connect RC low-pass filter from PVCC to VCC, the RC  
low-pass filter is composed of an external capacitor and  
an internal 10Ω resistor. Bypass VCC to GND with a  
capacitor 1uF is recommended. Place the capacitor  
close to the IC, within 12mm (0.5 inch) if possible.  
` Keep current limit setting network as close as possible  
to the IC. Routing of the network should avoid coupling  
to high-voltage switching node.  
` Connections from the drivers to the respective gate of  
the high-side or the low-side MOSFET should be as  
short as possible to reduce stray inductance. Use  
0.65mm (25 mils) or wider trace.  
www.richtek.com  
24  
DS8206A/B-03 December 2009  
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