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RT8206B 参数 Datasheet PDF下载

RT8206B图片预览
型号: RT8206B
PDF下载: 下载PDF文件 查看货源
内容描述: 高效率,主电源控制器>用于笔记本电脑 [High-Efficiency, Main Power Supply Controllers for Notebook Computers]
分类和应用: 电脑控制器
文件页数/大小: 26 页 / 360 K
品牌: RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
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RT8206A/B  
Operation Mode Selection  
The switching waveforms may appear noisy and  
asynchronous when light loading causesDiode-Emulation  
operation, but this is a normal operating condition that  
results in high light-load efficiency. Trade-offs in PFM noise  
vs. light-load efficiency is made by varying the inductor  
value. Generally, low inductor values produce a broader  
efficiency vs. load curve, while higher values result in higher  
full-load efficiency (assuming that the coil resistance  
remains fixed) and less output voltage ripple. Penalties  
for using higher inductor values include larger physical  
size and degraded load-transient response (especially at  
low input-voltage levels).  
The RT8206A/B supports three operation modes:Diode-  
Emulation Mode, Ultrasonic Mode, and Forced-CCM  
Mode. Users can set operation mode by SKIP pin. All of  
the three operation modes will be introduced as follows.  
Diode-Emulation Mode (SKIP = GND)  
InDiode-Emulation mode, the RT8206A/B automatically  
reduces switching frequency at light-load conditions to  
maintain high efficiency. This reduction of frequency is  
achieved smoothly and without the increase of VOUTx ripple  
or load regulation. As the output current decreases from  
heavy-load condition, the inductor current is also reduced,  
and eventually comes to the point that its valley touches  
zero current, which is the boundary between continuous  
conduction and discontinuous conduction modes. By  
emulating the behavior of diodes, the low-side MOSFET  
allows only partial of negative current when the inductor  
free-wheeling current reach negative. As the load current  
further decreases, it takes longer and longer to discharge  
the output capacitor to the level that requires for the next  
ONcycle. The on-time is kept the same as that in the  
heavy-load condition. In reverse, when the output current  
increases from light load to heavy load, the switching  
frequency increases to the preset value as the inductor  
current reaches the continuous conduction. The transition  
load point to the light-load operation can be calculated as  
following equation.  
Ultrasonic Mode (SKIP = REF)  
Connecting SKIP to REF activates a unique Diode-  
Emulation mode with a minimum switching frequency  
above 25kHz. This ultrasonic mode eliminates audio-  
frequency modulation that would otherwise be present  
when a lightly loaded controller automatically skips  
pulses. In ultrasonic mode, the low-side switch gate-driver  
signal is OR with an internal oscillator (>25kHz). Once  
the internal oscillator is triggered, the ultrasonic controller  
forces the LGATEx high, turning on the low-side MOSFET  
to induce a negative inductor current. At the point that the  
output voltage is higher than that of REF, the controller  
turns off the low-side MOSFET (LGATEx pulled low) and  
triggers a constant on-time (UGATExdriven high). When  
the on-time has expired, the controller re-enables the low-  
side MOSFET until the controller detects that the inductor  
current dropped below the zero-crossing threshold.  
(V V  
)
IN  
OUT  
I
×T  
ON  
LOAD  
2L  
where TON is the given On-time.  
Forced-CCM Mode (SKIP = VCC  
)
The low-noise, forced-CCM mode (SKIP = VCC) disables  
the zero-crossing comparator, which controls the low-side  
switch on-time. This causes the low-side gate-driver  
waveform to become the complement of the high-side gate-  
driver waveform. This in turn causes the inductor current  
to reverse at light loads as the PWM loop strives to  
maintain a duty ratio of VOUT/VIN. The benefit of the forced-  
CCM mode is to keep the switching frequency fairly  
constant, but it comes at a cost : The no-load battery  
current can be 10mAto 40mA, depending on the external  
MOSFETs.  
I
L
Slope = (V -V  
) / L  
OUT  
IN  
i
L, peak  
i
= i  
/ 2  
L, peak  
Load  
t
0
t
ON  
Figure 3. Boundary Condition of CCM/DEM  
DS8206A/B-03 December 2009  
www.richtek.com  
19  
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