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HD6417709SF133B 参数 Datasheet PDF下载

HD6417709SF133B图片预览
型号: HD6417709SF133B
PDF下载: 下载PDF文件 查看货源
内容描述: 瑞萨32位RISC单片机超级RISC引擎族/ SH7700系列 [Renesas 32-Bit RISC Microcomputer Super RISC engine Family/SH7700 Series]
分类和应用: 微控制器和处理器外围集成电路时钟
文件页数/大小: 807 页 / 4409 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Section  
Page  
Description  
8.3.3 Precautions  
when Using the Sleep  
Mode  
187  
Newley added  
8.5.1 Transition to  
Module Standby  
Function  
191  
210  
Note *3 added to bit table  
Note: 3. Before putting the RTC into module standby status, first  
access one or more of the RTC, SCI, and TMU  
registers. The RTC may then be put into module standby  
status.  
9.3 Clock Operating  
Modes  
2. under cautions amended  
The peripheral clock frequency should not be set higher than the  
frequency of the CKIO pin, higher than 33.34 MHz.  
Table 9.4 Available  
Combinations of Clock  
Mode and FRQCR  
Values  
9.5.1 Changing the  
Multiplication Rate  
213  
Description added  
5.Supply of the clock that has been set begins at WDT count  
overflow, and the processor begins operating again. The WDT  
stops after it overflows.  
When the following three conditions are all met, FRQCR should  
not be changed while a DMAC transfer is in progress.  
• Bits IFC2 to IFC0 are changed.  
• STC2 to STC0 are not changed.  
• The clock ratio of Iφ (on-chip clock) to Bφ (bus clock) after the  
change is other than 1:1.  
9.8.2 Changing the  
Frequency  
218,  
219  
Description added  
5.The counter stops at a value of H'00 or H'01. The stop value  
depends on the clock ratio.  
When the following three conditions are all met, FRQCR should  
not be changed while a DMAC transfer is in progress.  
• Bits IFC2 to IFC0 are changed.  
• STC2 to STC0 are not changed.  
• The clock ratio of Iφ (on-chip clock) to Bφ (bus clock) after the  
change is other than 1:1.  
10.1.1 Features  
223  
246  
Refresh function description deleted  
Description added  
10.2.5 Individual  
Memory Control  
Register (MCR)  
Bit 7—Synchronous DRAM Bank Active (RASD): Specifies  
whether synchronous DRAM is used in bank active mode or auto-  
precharge mode. Set auto-precharge mode when areas 2 and 3  
are both designated as synchronous DRAM space.  
The bank active mode should not be used unless the bus width  
for all areas is 32 bits.  
Rev. 5.0, 09/03, page xi of xliv  
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