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GRM155B31H103KA88 参数 Datasheet PDF下载

GRM155B31H103KA88图片预览
型号: GRM155B31H103KA88
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管的低噪声,高增益 [NPN SiGe RF Transistor for Low Noise, High-Gain]
分类和应用: 晶体晶体管
文件页数/大小: 16 页 / 176 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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NESG3033M14  
GAIN BANDWIDTH PRODUCT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
vs. COLLECTOR CURRENT  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
V
CE = 1 V  
V
CE = 2 V  
f = 2 GHz  
f = 2 GHz  
0
0
1
10  
100  
100  
100  
1
10  
100  
Collector Current I  
C
(mA)  
Collector Current I (mA)  
C
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
30  
25  
20  
15  
10  
40  
35  
30  
25  
20  
15  
V
CE = 1 V  
I = 15 mA  
V
CE = 3 V  
C
f = 2 GHz  
MSG  
MAG  
MAG  
2
MSG  
|S21e  
|
10  
5
5
0
0
1
10  
0.1  
1
10  
100  
Collector Current I  
C
(mA)  
Frequency f (GHz)  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
40  
35  
30  
25  
20  
15  
40  
V
CE = 2 V  
VCE = 3 V  
I = 15 mA  
I
C
= 15 mA  
C
35  
30  
25  
20  
15  
MSG  
MSG  
MAG  
MAG  
MAG  
MAG  
MSG  
MSG  
2
2
|S21e  
|
|S21e  
|
10  
5
10  
5
0
0
0.1  
1
10  
0.1  
1
10  
100  
Frequency f (GHz)  
Frequency f (GHz)  
Remark The graphs indicate nominal characteristics.  
R09DS0049EJ0300 Rev.3.00  
Sep 14, 2012  
Page 6 of 14  
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