NESG3033M14
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
250
200
150
100
50
0.3
0.2
0.1
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
0
25
50
75
100
125
(˚C)
150
1.0
1.0
0
1
2
3
4
5
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
V
CE = 1 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
1
40
35
30
25
20
15
10
5
V
CE = 3 V
200 A
μ
180
160
140
μ
μ
μ
μ
μ
A
A
A
120
100
A
A
0.1
80
60
μ
μ
A
A
0.01
0.001
40
μ
μ
A
A
IB
= 20
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
5
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 4 of 14
RENESAS [ RENESAS TECHNOLOGY CORP ]
