NESG3033M14
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0
−
−
−
−
100
100
380
nA
nA
−
VEB = 1 V, IC = 0
Note 1
hFE
VCE = 2 V, IC = 6 mA
220
300
RF Characteristics
Insertion Power Gain
Noise Figure
⏐S21e⏐2
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
15.0
17.5
0.60
−
dB
dB
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
NF
−
0.85
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
Associated Gain
Ga
−
17.5
−
dB
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0, f = 1 MHz
−
17.5
−
0.15
20.5
12.5
0.25
−
pF
dB
MSGNote 3 VCE = 2 V, IC = 15 mA, f = 2.0 GHz
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
Gain 1 dB Compression Output Power
PO (1 dB)
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
VCE = 3 V, IC (set) = 20 mA,
OIP3
−
24.0
−
dBm
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S21
3. MSG =
S12
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hFE CLASSIFICATION
Rank
FB/YFB
zL
Marking
hFE Value
220 to 380
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 3 of 14
RENESAS [ RENESAS TECHNOLOGY CORP ]
