72Mbit Pipelined BSRAM
w/ NoBL Architecture
2Mx36
Preliminary Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Description
Symbol
VDD3
VDD2
VIN, VOUT
TA
Value
Power Supply Voltage (3.3V device)
Power Supply Voltage (2.5V device)
Voltage on any Pin with Respect to Ground
Operating Temperature (ambient)
Storage Temperature
-0.5V to +4.6V
-0.5V to +3.6V
-0.5V to VDDQ +0.5V
-55°C to +125°C
Tstg
-65°C to +150°C
Power Dissipation
PD
1.2 W (TQFP), 1.6 W (PBGA)
20mA
DC Output Current (I/O pins)
IOUT
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these, or any other conditions above those listed in the operational section of the
specification, is not implied. Exposure to conditions at absolute maximum ratings for extended periods may affect device reliability.
DC Characteristics (TA = 0°C to 70°C)
Symbol
VDD3
VDDQ3
VDD2
VDDQ2
VIHDQ
VIH1
Parameter
Power Supply Voltage
Min
3.135
2.375
2.375
2.375
2.0
Typical
Max
3.465
3.465
2.625
2.625
VDDQ + 0.3
VDD + 0.3
0.8
Units
V
Notes
3.3
1
1
2
2
I/O Supply Voltage
-
V
Power Supply Voltage
2.5
V
I/O Supply Voltage
2.5
V
Input High Voltage (DQ pins)
Input High Voltage (Input-only pins)
Input Low Voltage
-
-
-
-
-
-
-
-
-
-
-
V
2.0
V
1, 3
1, 3
2, 4
2, 4
3
VIL1
-0.3
1.7
V
VIH2
Input High Voltage (Input-only pins)
Input Low Voltage
VDD + 0.3
0.7
V
VIL2
-0.3
2.4
V
VOH3
VOL3
VOH2
VOL2
II(L)
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = +8mA)
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = +4mA)
Input Leakage Current
VDDQ
V
VSS
2.0
0.4
V
3
VDDQ
V
4
VSS
-
0.4
V
4
±5
µA
µA
IO(L)
Output Leakage Current
-
±5
Notes:
1. Applies to SM2625Q and SM2625B 3.3V devices.
2. Applies to SM2625Q1 and SM2625B1 2.5V devices.
3. VDDQ = 3.3V ± 5%.
4. VDDQ = 2.5V ± 5%.
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
Copyright 2001 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
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Revision 1.0