72Mbit Pipelined BSRAM
w/ NoBL Architecture
2Mx36
Preliminary Data Sheet
Operating Currents (TA = 0°C to 70°C)
Value
Symbol
ICC
Parameter
Test Conditions
Units
mA
-6
-7.5
200
-10
Operating Current
Read or Write Every 4 Cycles
220
175
VDD = Max., IOUT = 0 mA,
f = 1/tCK
ISB1
ISB2
ISB3
Automatic CE
Power Down
Current-TTL Inputs
VDD = Max., Device Deselected,
VIN ≥ VIH or VIN ≤ VIL,
f = 1/tCK
50
20
40
40
20
30
35
20
25
mA
mA
mA
Automatic CE
Power Down
Current-CMOS Inputs
VDD = Max., Device Deselected,
VIN ≤ 0.3V or VIN ≥ VDDQ – 0.3V,
f = 0
Automatic CE
VDD = Max., Device Deselected,
Power Down
VIN ≤ 0.3V or VIN ≥ VDDQ – 0.3V,
Current-CMOS Inputs
f = 1/tCK
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
Copyright 2001 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
Page 10 of 30
Revision 1.0
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
