64Mbit – Enhanced SDRAM
8Mx8, 4Mx16 ESDRAM
Preliminary Datasheet
Operating Currents (TA = 0°C to 70°C, VDD = 3.3V +10%, -5%)
Parameter
Symbol
Test Condition
Value
-7.5
Units
Notes
-6
-10
ICC1A
ICCB
ICC2P
ICC2PS
BL = 1, CL = 1, Read or Write,
190
165
160
mA
mA
mA
mA
1,3
1,3
CKE ≥ VIH(min), tRC = min., tCK = min.
Operating Current
(One Bank Active)
BL = 1, CL = 2,3, Read or Write,
CKE ≥ VIH(min), tRC = min., tCK = min.
250
2
210
2
175
2
CKE ≤ VIL, tCK = min.,
Standby Current in
Power Down Mode
(DRAM Precharged)
Input Change Every Two Cycles
1.5
1.5
1.5
CKE ≤ VIL, tCK = Infinity,
No Input Change
Standby Current in Non-
Power Down Mode
ICC2N
90
15
80
15
70
15
mA
mA
CKE ≥ VIH, tCK = min.
CKE ≥ VIH, tCK = Infinity
ICC2NS
(DRAM Precharged)
ICC3N
ICC3P
ICC4A
ICC4B
100
90
80
mA
CKE ≥ VIH, tCK = min.,
Input Change Every Two Cycles
Device Deselected
(DRAM Active)
3
2.5
2
mA
CKE ≤ VIL, tCK = min.,
Input Change Every Two Cycles
BL = Full Page, CL = 1, Read or Write,
170
300
140
280
130
270
mA
mA
1,2,3
1,2,3
tRC = Infinity, tCK = min.
Burst Operating Current
(All Banks Active)
BL = Full Page, CL = 2,3, Read or Write,
tRC = Infinity, tCK = min.
ICC5F
ICC5D
ICC6
CL = 3, tCK = min., tRC = tRC(min).
CL = 3, tCK = min., tRC = 15.625 µs
CKE ≤ 0.2V, No Input Change
380
40
2.5
340
35
2.5
310
30
2.5
mA
mA
mA
3,4,5
3,4,5
Auto (CBR) Refresh
Current
Self Refresh Current
Notes:
1. The specified value is obtained with the outputs open.
2. The specified value is obtained when the programmed burst length is executed to completion without interruption by a subsequent burst read or
burst write cycle.
3. The specified value is valid when addresses are changed no more than once during tCK(min).
4. The specified value is valid when No Operation commands are registered on every rising clock edge during tRC(min).
5. The specified value is valid when data inputs (DQs) are stable during tRC(min).
This is a product in sampling or pre-production phase of development. Charac-
teristic data and other specifications are subject to change without notice.
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
Revision 1.1
Page 17 of 33
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
