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SM2604T-6 参数 Datasheet PDF下载

SM2604T-6图片预览
型号: SM2604T-6
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 4MX16, 4.3ns, CMOS, PDSO54, TSOP-54]
分类和应用: 时钟动态存储器光电二极管
文件页数/大小: 33 页 / 305 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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64Mbit – Enhanced SDRAM  
8Mx8, 4Mx16 ESDRAM  
Preliminary Datasheet  
Timing Diagrams (B = Bank Address, R = Row Address, C = Column Address)  
Power Up and Initialization Sequence  
CLK  
tRP  
tRC  
tRC  
tMRD  
tMRD  
CS#  
RAS#  
CAS#  
WE#  
00  
10  
Bx  
R
BA(1:0)  
A11, A9  
A10/AP  
A(8:0)  
Code  
Code  
R
Code  
Code  
R
DQM  
Hi-Z  
DQ  
Internal Status  
All Banks  
Precharge All  
Refresh  
Refresh  
MRS  
EMRS  
Bank X Active  
After Power is applied to VDD and VDDQ, and the clock is stable, an initial pause of 100µs is required. Once this delay is  
satisfied, the controller must issue DESEL commands prior to the signaling shown in this diagram. The EMRS command  
is optional.  
This is a product in sampling or pre-production phase of development. Charac-  
teristic data and other specifications are subject to change without notice.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Revision 1.1  
Page 21 of 33  
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