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SM2604T-6 参数 Datasheet PDF下载

SM2604T-6图片预览
型号: SM2604T-6
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 4MX16, 4.3ns, CMOS, PDSO54, TSOP-54]
分类和应用: 时钟动态存储器光电二极管
文件页数/大小: 33 页 / 305 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号SM2604T-6的Datasheet PDF文件第11页浏览型号SM2604T-6的Datasheet PDF文件第12页浏览型号SM2604T-6的Datasheet PDF文件第13页浏览型号SM2604T-6的Datasheet PDF文件第14页浏览型号SM2604T-6的Datasheet PDF文件第16页浏览型号SM2604T-6的Datasheet PDF文件第17页浏览型号SM2604T-6的Datasheet PDF文件第18页浏览型号SM2604T-6的Datasheet PDF文件第19页  
64Mbit – Enhanced SDRAM  
8Mx8, 4Mx16 ESDRAM  
Preliminary Datasheet  
Electrical Characteristics  
Absolute Maximum Ratings  
Description  
Symbol  
VDD  
Value  
-1V to +4.6V  
Power Supply Voltage  
I/O Power Supply Voltage  
Voltage on any Pin with Respect to Ground  
Operating Temperature (ambient)  
Storage Temperature  
VDDQ  
VIN, VOUT  
TA  
-1V to +4.6V, where VDDQ VDD+1V  
-0.5V to +4.6V  
0°C to +70°C  
Tstg  
PD  
-55°C to +150°C  
TBD  
Power Dissipation  
DC Output Current (I/O pins)  
IOUT  
50mA  
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating  
only, and the functional operation of the device at these, or any other conditions above those listed in the operational section of the  
specification, is not implied. Exposure to conditions at absolute maximum ratings for extended periods may affect device reliability.  
DC Operating Conditions (TA = 0°C to 70°C)  
Symbol  
VDD  
VDDQ  
VIH1  
VIL1  
VIH2  
VIL2  
II(L)  
IO(L)  
Parameter  
Min  
3.135  
2.3  
2.0  
-0.3  
1.7  
-0.3  
-
Typical  
Max  
Units  
V
V
V
V
V
V
µA  
µA  
V
Notes  
Supply Voltage  
3.3  
3.63  
3.63  
VDD + 0.3  
0.8  
VDDQ + 0.3  
I/O Supply Voltage  
Input High Voltage  
Input Low Voltage  
-
3.3  
0.0  
2.5  
0.0  
-
-
-
-
-
1
2, 3  
2, 3  
4
Input High Voltage (DQ pins)  
Input Low Voltage (DQ pins)  
Input Leakage Current (VSS VIN VDD)  
Output Leakage Current (VSSQ VDQ VDDQ  
Output High Voltage (IOUT = -4mA)  
Output Low Voltage (IOUT = +4mA)  
Output High Voltage (IOUT = -2mA)  
Output Low Voltage (IOUT = +2mA)  
0.7  
±5  
±5  
-
0.4  
-
4
-
)
VOH1  
VOL1  
VOH2  
VOL2  
2.4  
-
2.0  
-
3
3
4
4
V
V
V
-
0.4  
Notes:  
1.  
V
DDQ must be no more than 0.3V higher than VDD.  
2. Applies to all input-only pins regardless of VDDQ voltage.  
3. Applies to DQ pins when VDDQ = 3.3V.  
4. Applies to DQ pins when VDDQ = 2.5V.  
This is a product in sampling or pre-production phase of development. Charac-  
teristic data and other specifications are subject to change without notice.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Revision 1.1  
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