64Mbit – Enhanced SDRAM
8Mx8, 4Mx16 ESDRAM
Preliminary Datasheet
DC Output Load Circuit
For VDDQ = 3.3V
VOH (DC) = 2.4V, IOH = -4mA
VOL (DC) = 0.4V, IOL = 4mA
RL
VT = 1.4V, RL = 250
Ω
Output
VT
For VDDQ = 2.5V
VOH (DC) = 2.0V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
VT = 1.2V, RL =400
Ω
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V +10%, -5%)
Symbol
CIn1
CIn2
Parameter
Min
Typical
Max
6.0
5.5
6.0
Units
pF
pF
Notes
Input Capacitance (BA1, BA0, A0-11)
Input Capacitance (all control inputs)
Output Capacitance (DQ0-15)
-
-
-
-
-
-
CO
pF
This is a product in sampling or pre-production phase of development. Charac-
teristic data and other specifications are subject to change without notice.
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
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Revision 1.1
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
