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FM24CL64B-GA 参数 Datasheet PDF下载

FM24CL64B-GA图片预览
型号: FM24CL64B-GA
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kb的串行3V F-RAM存储器 [64Kb Serial 3V F-RAM Memory]
分类和应用: 存储
文件页数/大小: 12 页 / 223 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24CL64B - 64Kb 3V I2C F-RAM (Automotive Temp.)  
configuration EEPROM during writes. The complete  
operation for both writes and reads is explained  
below.  
Addressing Overview  
After the FM24CL64B (as receiver) acknowledges  
the slave address, the master can place the memory  
address on the bus for a write operation. The address  
requires two bytes. The first is the MSB. Since the  
device uses only 13 address bits, the value of the  
upper three bits are “don‟t care”. Following the MSB  
is the LSB with the remaining eight address bits. The  
address value is latched internally. Each access  
causes the latched address value to be incremented  
automatically. The current address is the value that is  
held in the latch -- either a newly written value or the  
address following the last access. The current address  
will be held for as long as power remains or until a  
new value is written. Reads always use the current  
address. A random read address can be loaded by  
beginning a write operation as explained below.  
Write Operation  
All writes begin with a slave address, then a memory  
address. The bus master indicates a write operation  
by setting the LSB of the slave address (R/W bit) to a  
0. After addressing, the bus master sends each byte  
of data to the memory and the memory generates an  
acknowledge condition. Any number of sequential  
bytes may be written. If the end of the address range  
is reached internally, the address counter will wrap  
from 1FFFh to 0000h.  
Unlike other nonvolatile memory technologies, there  
is no effective write delay with F-RAM. Since the  
read and write access times of the underlying  
memory are the same, the user experiences no delay  
through the bus. The entire memory cycle occurs in  
less time than a single bus clock. Therefore, any  
operation including read or write can occur  
immediately following a write. Acknowledge polling,  
a technique used with EEPROMs to determine if a  
write is complete is unnecessary and will always  
return a ready condition.  
After transmission of each data byte, just prior to the  
acknowledge, the FM24CL64B increments the  
internal address latch. This allows the next sequential  
byte to be accessed with no additional addressing.  
After the last address (1FFFh) is reached, the address  
latch will roll over to 0000h. There is no limit to the  
number of bytes that can be accessed with a single  
read or write operation.  
Internally, an actual memory write occurs after the 8th  
data bit is transferred. It will be complete before the  
acknowledge is sent. Therefore, if the user desires to  
abort a write without altering the memory contents,  
this should be done using start or stop condition prior  
to the 8th data bit. The FM24CL64B uses no page  
buffering.  
Data Transfer  
After the address information has been transmitted,  
data transfer between the bus master and the  
FM24CL64B can begin. For a read operation the  
FM24CL64B will place 8 data bits on the bus then  
wait for an acknowledge from the master. If the  
acknowledge occurs, the FM24CL64B will transfer  
the next sequential byte. If the acknowledge is not  
sent, the FM24CL64B will end the read operation.  
For a write operation, the FM24CL64B will accept 8  
data bits from the master then send an acknowledge.  
All data transfer occurs MSB (most significant bit)  
first.  
The memory array can be write-protected using the  
WP pin. Setting the WP pin to a high condition  
(VDD  
)
will write-protect all addresses. The  
FM24CL64B will not acknowledge data bytes that  
are written to protected addresses. In addition, the  
address counter will not increment if writes are  
attempted to these addresses. Setting WP to a low  
state (VSS) will deactivate this feature. WP is pulled  
down internally.  
Memory Operation  
The FM24CL64B is designed to operate in a manner  
very similar to other 2-wire interface memory  
products. The major differences result from the  
higher performance write capability of F-RAM  
technology. These improvements result in some  
differences between the FM24CL64B and a similar  
Figures 5 and 6 below illustrate a single-byte and  
multiple-byte write cycles.  
Rev. 1.1  
June 2011  
Page 5 of 12  
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