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HYB18T512400BF-5 参数 Datasheet PDF下载

HYB18T512400BF-5图片预览
型号: HYB18T512400BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 57 页 / 2915 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T512xxxBF–[2.5…5]  
512-Mbit Double-Data-Rate-Two SDRAM  
Table 41  
Timing Parameter by Speed Grade - DDR2–800 (cont’d)  
Parameter  
Symbol  
DDR2–800  
Unit Note1)2)3)4)5)  
6)  
Min.  
Max.  
Address and control input setup time  
DQ low-impedance time from CK / CK  
DQS low-impedance from CK / CK  
Mode register set command cycle time  
OCD drive mode output delay  
tIS(base)  
tLZ(DQ)  
tLZ(DQS)  
tMRD  
175  
ps  
ps  
ps  
tCK  
ns  
ps  
µs  
µs  
ns  
2 × tAC.MIN  
tAC.MAX  
tAC.MAX  
tAC.MIN  
2
tOIT  
0
12  
Data output hold time from DQS  
Data hold skew factor  
tQH  
tHPtQHS  
tQHS  
300  
7.8  
12)13)  
Average periodic refresh Interval  
tREFI  
14)  
15)  
3.9  
Auto-Refresh to Active/Auto-Refresh  
command period  
tRFC  
105  
16)  
Precharge-All (4 banks) command period tRP  
tRP  
0.9  
0.40  
7.5  
10  
ns  
tCK  
tCK  
ns  
ns  
ns  
Read preamble  
Read postamble  
tRPRE  
tRPST  
1.1  
0.60  
17)  
Active bank A to Active bank B command tRRD  
period  
Internal Read to Precharge command  
delay  
tRTP  
7.5  
Write preamble  
Write postamble  
tWPRE  
tWPST  
0.35 x tCK  
0.40  
tCK  
tCK  
ns  
18)  
0.60  
Write recovery time for write without Auto- tWR  
15  
Precharge  
19)  
Write recovery time for write with Auto-  
Precharge  
WR  
t
WR/tCK  
tCK  
20)  
21)  
Internal Write to Read command delay  
tWTR  
7.5  
2
ns  
Exit power down to any valid command  
(other than NOP or Deselect)  
tXARD  
tCK  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
tXP  
8 – AL  
2
tCK  
tCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
Exit Self-Refresh to non-Read command  
Exit Self-Refresh to Read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
tCK  
1) VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1 V. See notes  
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be  
powered down and then restarted through the specified initialization sequence before normal operation can continue.  
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a  
differential Slew Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross.  
The DQS / DQS, RDQS/ RDQS, input reference level is the crosspoint when in differential strobe mode.  
5) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is  
recognized as low.  
6) The output timing reference voltage level is VTT.  
Internet Data Sheet  
40  
Rev. 1.05, 2007-01  
03292006-YBYM-WG0Z  
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