HYB18T512xxxBF–[2.5…5]
512-Mbit Double-Data-Rate-Two SDRAM
5
Electrical Characteristics
5.1
Absolute Maximum Ratings
Table 19
Symbol
VDD
Absolute Maximum Ratings
Parameter
Rating
Unit
V
Note
1)
Voltage on VDD pin relative to VSS
Voltage on VDDQ pin relative to VSS
Voltage on VDDL pin relative to VSS
Voltage on any pin relative to VSS
Storage Temperature
–1.0 to +2.3
–0.5 to +2.3
–0.5 to +2.3
–0.5 to +2.3
–55 to +100
VDDQ
V
—
—
VDDL
V
VIN, VOUT
TSTG
V
—
2)
°C
1) When VDD and VDDQ and VDDL are less than 500mV; Vref may be equal to or less than 300mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values maycause
irreversible damage to the integrated circuit.
Table 20
Symbol
TOPER
DRAM Component Operating Temperature Range
Parameter
Rating
Unit
Note
1)2)3)4)
Operating Temperature
0 to 95
°C
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation,
the DRAM case temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs.
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be
enabled by setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6
by approximately 50%
Internet Data Sheet
25
Rev. 1.05, 2007-01
03292006-YBYM-WG0Z
QIMONDA [ QIMONDA AG ]
